| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photovoltaic device which is excellent in photoelectric conversion efficiency, in which degradation in photoelectric conversion efficiency that is caused by carrier re-combination on the rear surface side of the photovoltaic device is prevented. <P>SOLUTION: A photovoltaic device includes a p-type semiconductor substrate 1 that contains an n-type impurity diffusion layer 2 in which second conductivity type impurity elements are diffused on one surface side and the other surface side, a light receiving surface side electrode 5 which is formed on one surface side of the p-type semiconductor substrate 1 by electrically connecting to the n-type impurity diffusion layer 2 formed on one surface side of the p-type semiconductor substrate 1, and a rear surface electrode 6 formed at least in a region except for an outer peripheral edge on the other surface side of the p-type semiconductor substrate 1. The n-type impurity diffusion layer 2 includes a low resistance n-type impurity diffusion layer 3 formed at least in a lower region of the light receiving surface side electrode 5 on one surface side of the p-type semiconductor substrate 1, and a high-resistance n-type impurity diffusion layer 4 which is formed in a region other than the low resistance n-type impurity diffusion layer 3 on one surface side of the p-type semiconductor substrate 1 as well as at the outer peripheral edge on the other surface side of the p-type semiconductor substrate 1, and has a sheet resistance higher than the low resistance n-type impurity diffusion layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
