| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser in which a semiconductor lasers (striped active layers) are disposed in high density. <P>SOLUTION: A semiconductor laser comprises a plurality of active layers 10 which are provided in a striped pattern while being separated from each other, a plurality of electrodes 12 which are provided on an upper side of the active layers 10 correspondingly to each of the active layers 10, support parts 40 each of which is comprised of a semiconductor and provided in a region between the active layers 10 and the upper surfaces of which are located higher than the electrodes 12, and wiring 16 which is electrically connected with one of the plurality of electrodes 12, supported by a plurality of support parts 40 and has a structure to be separated from the electrodes 12 being positioned between the plurality of support parts 40. <P>COPYRIGHT: (C)2013,JPO&INPIT |
