An improved semiconductor capacitor and method of fabrication is disclosed. Embodiments utilize a deep trench which is then processed by performing a pre-amorphous implant on the trench interior to transform the interior surface of the trench to amorphous silicon which eliminates the depletion region that can degrade capacitor performance.
申请公布号
US2013099354(A1)
申请公布日期
2013.04.25
申请号
US201113279877
申请日期
2011.10.24
申请人
PEI CHENGWEN;BOOTH, JR. ROGER ALLEN;HO HERBERT LEI;KUSABA NAOYOSHI;INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人
PEI CHENGWEN;BOOTH, JR. ROGER ALLEN;HO HERBERT LEI;KUSABA NAOYOSHI