发明名称 |
SEMICONDUCTOR DEVING HAVING METAL GATE ELECTRODE AND METHOD OF FABRICATION THEREOF |
摘要 |
The present disclosure provides a method including providing a substrate having a first opening and a second opening on the substrate. A blocking layer is formed in the first opening. A second metal gate electrode is formed the second opening while the blocking layer is in the first opening. The blocking layer is then removed from the first opening, and a first metal gate electrode formed. In embodiments, this provides for a device having a second gate electrode that includes a second work function layer and not a first work function layer, and the first gate electrode includes the first work function layer and not the second work function layer.
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申请公布号 |
US2013099320(A1) |
申请公布日期 |
2013.04.25 |
申请号 |
US201113276859 |
申请日期 |
2011.10.19 |
申请人 |
LEE DA-YUAN;HSU KUANG-YUAN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.,("TSMC") |
发明人 |
LEE DA-YUAN;HSU KUANG-YUAN |
分类号 |
H01L29/772;H01L21/28 |
主分类号 |
H01L29/772 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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