METHOD FOR PRODUCING AN ORGANISED NETWORK OF SEMICONDUCTOR NANOWIRES, IN PARTICULAR MADE OF ZNO

摘要

This method for producing an organised network of nanowires from ZnO comprises the following steps: obtaining a layer (1) of ZnO with Zn polarity on a substrate (5), by epitaxial growth at a low temperature, advantageously between 400°C and 650°C, and advantageously in the presence of dioxygen (O2); forming a mask (2) provided with openings (3) on this layer for the subsequent growth of the nanowires; epitaxial growth of ZnO nanowires (4).