A SINGLE CRYSTAL HIGH DIELECTRIC CONSTANT MATERIAL

摘要

The invention provides a stable oxide material system for a capacitor, electronic device or a memory device having an effective high-k value with an effective zero alpha while exhibiting low leakage current density. The stable oxide material comprises MxSi1-xO2, wherin the elements M & Si are mixed such that the insulator layer comprises staggered edge-linked S iO2-MO2 bonding chains to provide a stable 3-dimensional single crystal system.