发明名称 PIEZOELECTRIC MATERIALS AND METHODS OF PROPERTY CONTROL
摘要 Among other things, piezoelectric materials and methods of their manufacture are described; particularly methods of forming regions of varying crystal structure within a relaxor piezoelectric substrate. Such methods may including heating the piezoelectric substrate above the transition temperature and below the Curie temperature such that a first phase transition occurs to a first crystal structure; rapidly cooling the piezoelectric substrate below the transition temperature at a cooling rate that is sufficiently high for the first crystal structure to persist; and applying an electric field through one or more selected regions of the piezoelectric substrate, such that within the one or more selected regions, a second phase transition occurs and results in a second crystal structure.
申请公布号 CA2850232(A1) 申请公布日期 2013.04.25
申请号 CA20122850232 申请日期 2012.10.18
申请人 DALHOUSIE UNIVERSITY 发明人 GARLAND, PHILIP P.;ADAMSON, ROBERT B. A.;BEZANSON, ANDRE B.;BROWN, JEREMY A.
分类号 H01L41/253;B06B1/06;C30B19/12;C30B33/04;G01B9/02;G01S7/52;G02B6/132;G10K11/18;H01L41/047;H01L41/18 主分类号 H01L41/253
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