| 摘要 |
A light emitting device includes a p-side, an n-side, and an active layer between the p-side and the n-side. The p-side includes a p-side contact, an electron blocking layer, a p-side separate confinement heterostructure (p-SCH), and a p-cladding/current spreading region disposed between the p-SCH and the p-side contact. The n-side includes an n-side contact, and an n-side separate confinement heterostructure (n-SCH). The active layer is configured to emit light in a wavelength range, wherein the p-side and the n-side have asymmetrical optical transmission properties with respect to the wavelength range emitted by the active layer.
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