发明名称 |
METHOD OF FORMING AN INTEGRATED CIRCUIT |
摘要 |
A method of forming an integrated circuit is disclosed. A second material layer is formed on a first material layer. A patterned mask layer having a plurality of first features with a first pitch P1 is formed on the second material layer. The second material layer is etched by using the patterned mask layer as a mask to form the first features in the second material layer. The patterned mask layer is trimmed. A plurality of dopants is introduced into the second material layer not covered by the trimmed patterned mask layer. The trimmed patterned mask layer is removed to expose un-doped second material layer. The un-doped second material layer is selectively removed to form a plurality of second features with a second pitch P2. P2 is smaller than P1.
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申请公布号 |
US2013102136(A1) |
申请公布日期 |
2013.04.25 |
申请号 |
US201113277552 |
申请日期 |
2011.10.20 |
申请人 |
HSIEH TZU-YEN;MING-CHING CHANG;LEE CHUN-HUNG;LIN YIH-ANN;CHEN DE-FANG;CHEN CHAO-CHENG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
HSIEH TZU-YEN;MING-CHING CHANG;LEE CHUN-HUNG;LIN YIH-ANN;CHEN DE-FANG;CHEN CHAO-CHENG |
分类号 |
H01L21/04 |
主分类号 |
H01L21/04 |
代理机构 |
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代理人 |
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地址 |
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