发明名称 |
MULTILAYER STRUCTURE BASED ON A NEGATIVE DIFFERENTIAL RESISTANCE MATERIAL |
摘要 |
A multilayer structure is disclosed that includes a conductive layer, a layer of a negative differential resistance (NDR) material disposed above the conductive layer, a layer M2 disposed above the NDR material, a second layer of NDR material disposed above layer M2, and a conductive layer disposed above the second NDR layer. Layer M2 can include a conductive material interspersed with regions of a dielectric material or a layer of the dielectric material and regions of the conductive material disposed above and below the dielectric material. |
申请公布号 |
US2013099187(A1) |
申请公布日期 |
2013.04.25 |
申请号 |
US201113281186 |
申请日期 |
2011.10.25 |
申请人 |
PICKETT MATTHEW D.;WILLIAMS R. STANLEY;RIBEIRO GILBERTO M.;JACKSON WARREN |
发明人 |
PICKETT MATTHEW D.;WILLIAMS R. STANLEY;RIBEIRO GILBERTO M.;JACKSON WARREN |
分类号 |
H01L45/00;B32B3/00;B32B3/10;B32B9/04;B32B15/04;B32B17/06 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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