发明名称 MULTILAYER STRUCTURE BASED ON A NEGATIVE DIFFERENTIAL RESISTANCE MATERIAL
摘要 A multilayer structure is disclosed that includes a conductive layer, a layer of a negative differential resistance (NDR) material disposed above the conductive layer, a layer M2 disposed above the NDR material, a second layer of NDR material disposed above layer M2, and a conductive layer disposed above the second NDR layer. Layer M2 can include a conductive material interspersed with regions of a dielectric material or a layer of the dielectric material and regions of the conductive material disposed above and below the dielectric material.
申请公布号 US2013099187(A1) 申请公布日期 2013.04.25
申请号 US201113281186 申请日期 2011.10.25
申请人 PICKETT MATTHEW D.;WILLIAMS R. STANLEY;RIBEIRO GILBERTO M.;JACKSON WARREN 发明人 PICKETT MATTHEW D.;WILLIAMS R. STANLEY;RIBEIRO GILBERTO M.;JACKSON WARREN
分类号 H01L45/00;B32B3/00;B32B3/10;B32B9/04;B32B15/04;B32B17/06 主分类号 H01L45/00
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