| 摘要 |
<p>Provided are: a polishing pad, which improves the problem of scratches that are produced in cases where conventional hard (dry) polishing pads are used, which has having excellent polishing rate and polishing uniformity, and which is applicable not only to primary polishing but also to final polishing; and a method for producing the polishing pad. A polishing pad for semiconductor device polishing, which comprises a polishing layer having a polyurethane polyurea resin molded body that contains generally spherical cells. This polishing pad for semiconductor device polishing is characterized in that: the polyurethane polyurea resin molded body has a closed cell ratio of 60-98%; the ratio of the loss modulus (E") to the storage modulus (E'), namely loss modulus/storage modulus (tan delta) of the polyurethane polyurea resin molded body is 0.15-0.30; the storage modulus (E') is 1-100 MPa; and the polyurethane polyurea resin molded body has a density (D) of 0.4-0.8 g/cm3.</p> |
