发明名称 THIN FILM TRANSISTOR ARRAY, MANUFACTURING METHOD THEREOF, AND ELECTROPHORETIC DISPLAY
摘要 <P>PROBLEM TO BE SOLVED: To provide a distance between pixel electrodes that is great enough to be suitable for printing and perform a desired display even when the great distance between the pixel electrodes is provided. <P>SOLUTION: In a thin film transistor array, thin film transistors are arranged in a matrix form in a state in which a plurality of gate electrodes 2 are connected to a gate wire 2a and a plurality of source electrodes 4 are connected to a source wire 4a. Each of the thin film transistors has, on an insulating substrate 1, at least a gate electrode 2, a gate insulating film 3, a source electrode 4, a drain electrode 5, a pixel electrode 9 that is connected to the drain electrode 5, and a semiconductor layer 6 that is formed between the source electrode 4 and the drain electrode 5. When portions between adjacent pixel electrodes 9 are represented as lines and portions where a plurality of the lines cross each other are represented as nodes, the pixel electrodes 9 are arranged so as to connect three of the lines to one of the nodes. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013076739(A) 申请公布日期 2013.04.25
申请号 JP20110215020 申请日期 2011.09.29
申请人 TOPPAN PRINTING CO LTD 发明人 ISHIZAKI MAMORU
分类号 G02F1/167;G09F9/30;G09F9/37;H01L21/336;H01L29/786 主分类号 G02F1/167
代理机构 代理人
主权项
地址