| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resistance change element capable of obtaining high reliability and high density, preventing incorrect writing and malfunction. <P>SOLUTION: The resistance change element includes a lamination structure having a first electrode (201), a resistance change film (202), a second electrode (203), an intermediate insulating film (204) and a control electrode (205) laminated in that order. The resistance change layer (202) has no direct contact with the intermediate insulating film (204). <P>COPYRIGHT: (C)2013,JPO&INPIT |
