发明名称 |
SEMICONDUCTOR DEVICE HAVING STRAIN MATERIAL |
摘要 |
A semiconductor device having strain material is disclosed in a particular embodiment, the semiconductor device includes a first cell including a first gate between a first drain and a first source. The semiconductor device also includes a second cell adjacent to the first cell. The second cell includes a second gate between a second drain and a second source. The semiconductor device further includes a shallow trench isolation area between the first source and the second source. A first amount of strain material over the first source and over the second source is greater than a second amount of strain material over the first drain and over the second drain.
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申请公布号 |
US2013099851(A1) |
申请公布日期 |
2013.04.25 |
申请号 |
US201213448786 |
申请日期 |
2012.04.17 |
申请人 |
YANG HAINING;QUALCOMM INCORPORATED |
发明人 |
YANG HAINING |
分类号 |
H01L27/088;H01L21/02;H01L21/48;H03K17/687 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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