发明名称 |
CHEMICAL VAPOR DEPOSITION APPARATUS |
摘要 |
A chemical vapor deposition apparatus can include a reaction chamber having a reaction space therein; a wafer boat disposed in the reaction space, the wafer boat arranged and structured to support a plurality of wafers; and a gas supplying part disposed in the reaction chamber to supply two or more reaction gases to the plurality of wafers. The gas supplying part can include a plurality of gas pipes disposed in the reaction chamber to supply the two or more reaction gases from outside to the reaction space; and a plurality of supplying pipes disposed around the wafer boat, wherein each of the supplying pipes is connected to two or more corresponding gas pipes, and wherein each supplying pipe is configured to supply the two or more reaction gases supplied by the two or more corresponding gas pipes to a corresponding one of the wafers.
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申请公布号 |
US2013098293(A1) |
申请公布日期 |
2013.04.25 |
申请号 |
US201213655696 |
申请日期 |
2012.10.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JONG HYUN;RYU HYUN SEOK;LEE JUNG HYUN;KIM KI SUNG;YOON SUK HO;KIM YOUNG SUN |
分类号 |
C23C16/455;C23C16/458 |
主分类号 |
C23C16/455 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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