发明名称 COMPOSITIONS AND METHODS FOR SELECTIVELY ETCHING SILICON NITRIDE
摘要 Compositions useful for the selective removal of silicon nitride materials relative to silicon oxide materials from a microelectronic device having same thereon. The removal compositions include at least one alkoxysilane, at least one etchant, at least one oxidizing agent, at least one organic solvent, and water.
申请公布号 WO2012174518(A3) 申请公布日期 2013.04.25
申请号 WO2012US42925 申请日期 2012.06.18
申请人 ADVANCED TECHNOLOGY MATERIALS, INC.;WU, HSING-CHEN;COOPER, EMANUEL, I.;KOJI, YUKICHI;BARNES, JEFFREY, A.;SHYU, JIEH-HWA;IDA, TOSHIYUKI;HUANG, YUNG-HSIN;HSU, HENG-KAI;HSU, WISMA 发明人 WU, HSING-CHEN;COOPER, EMANUEL, I.;KOJI, YUKICHI;BARNES, JEFFREY, A.;SHYU, JIEH-HWA;IDA, TOSHIYUKI;HUANG, YUNG-HSIN;HSU, HENG-KAI;HSU, WISMA
分类号 C09K13/00;C09K13/06;C09K13/08;H01L21/302 主分类号 C09K13/00
代理机构 代理人
主权项
地址