MULTI-TRANSISTOR

摘要

The present invention relates to a multi-transistor and a method of manufacturing same. The multi-transistor according to an embodiment of the present invention includes: a first transistor including a gate, a first source formed on one side of the gate, and a first drain formed on the other side of the gate; and a second transistor including a second drain formed oppositely to the first source and on the one side of the gate on a substrate, and a second source formed oppositely to the first drain and on the other side of the gate, so as to minimize parasite inductance components occurring between opposite transistors.