发明名称 THREE-DIMENSIONAL INTEGRATED CIRCUIT LATERAL HEAT DISSIPATION
摘要 <P>PROBLEM TO BE SOLVED: To provide a 3-D integrated circuit lateral heat dissipation. <P>SOLUTION: By filling an air gap between steps of a stacked IC device with a thermally conductive material, heat generated at one or more locations within one of the steps can be laterally displaced. The lateral displacement of the heat can be along the full length of the step and the thermal material can be electrically insulated. Through silicon-vias (TSVs) can be constructed at certain locations to assist in heat dissipation away from thermally troubled locations. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013077837(A) 申请公布日期 2013.04.25
申请号 JP20120283703 申请日期 2012.12.26
申请人 QUALCOMM INC 发明人 KENNETH CASCONE;GU SHIQUN;MATTHEW M NOWAK
分类号 H01L23/373;H01L25/065;H01L25/07;H01L25/18 主分类号 H01L23/373
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