发明名称 |
METHOD OF FORMING SELF-ASSEMBLED PATTERNS USING BLOCK COPOLYMERS, AND ARTICLES THEREOF |
摘要 |
A method of forming a block copolymer pattern comprises providing a substrate comprising a topographic pre-pattern comprising a ridge surface separated by a height, h, greater than 0 nanometers from a trench surface; disposing a block copolymer comprising two or more block components on the topographic pre-pattern to form a layer having a thickness of more than 0 nanometers over the ridge surface and the trench surface; and annealing the layer to form a block copolymer pattern having a periodicity of the topographic pre-pattern, the block copolymer pattern comprising microdomains of self-assembled block copolymer disposed on the ridge surface and the trench surface, wherein the microdomains disposed on the ridge surface have a different orientation compared to the microdomains disposed on the trench surface. Also disclosed are semiconductor devices.
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申请公布号 |
US2013099362(A1) |
申请公布日期 |
2013.04.25 |
申请号 |
US201213709397 |
申请日期 |
2012.12.10 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
KIM HO-CHEOL;PARK SANG-MIN;RETTNER CHARLES T. |
分类号 |
H01L29/06 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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