发明名称 |
STRAIN COMPENSATED REO BUFFER FOR III-N ON SILICON |
摘要 |
A method of fabricating a rare earth oxide buffered III-N on silicon wafer including providing a crystalline silicon substrate, depositing a rare earth oxide structure on the silicon substrate including one or more layers of single crystal rare earth oxide, and depositing a layer of single crystal III-N material on the rare earth oxide structure so as to form an interface between the rare earth oxide structure and the layer of single crystal III-N material. The layer of single crystal III-N material produces a tensile stress at the interface and the rare earth oxide structure has a compressive stress at the interface dependent upon a thickness of the rare earth oxide structure. The rare earth oxide structure is grown with a thickness sufficient to provide a compressive stress offsetting at least a portion of the tensile stress at the interface to substantially reduce bowing in the wafer.
|
申请公布号 |
US2013099357(A1) |
申请公布日期 |
2013.04.25 |
申请号 |
US201113278952 |
申请日期 |
2011.10.21 |
申请人 |
DARGIS RYTIS;ARKUN ERDEM;ROUCKA RADEK;CLARK ANDREW;LEBBY MICHAEL |
发明人 |
DARGIS RYTIS;ARKUN ERDEM;ROUCKA RADEK;CLARK ANDREW;LEBBY MICHAEL |
分类号 |
H01L21/20;H01L29/06;H01L29/20 |
主分类号 |
H01L21/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|