发明名称 METHOD OF CONTROLLING AN ION IMPLANTER IN PLASMA IMMERSION MODE
摘要 The present invention relates to a method of controlling an ion implanter comprising a plasma power supply (AP) and a substrate power supply (PS), said substrate power supply comprising: . - an electricity generator (HT), . - a first switch (SW1) connected between the generator and the output terminal of said substrate power supply, . - a second switch (SW2) connected between the output terminal and a neutralising terminal, method comprising an implantation phase (A-D) and a neutralisation phase (E-H). This method also comprises a relaxation phase (C-F) which overlaps the implantation phase and the neutralisation phase, relaxation phase during which the plasma power supply is inactivated. Furthermore, the neutralisation phase comprises a preliminary step (E-F) to close the second switch, said preliminary step being followed by a cancellation step (F-G) to activate the plasma power supply (AP). Figure to be published: figure 4.
申请公布号 WO2013057390(A1) 申请公布日期 2013.04.25
申请号 WO2012FR00392 申请日期 2012.10.04
申请人 ION BEAM SERVICES;TORREGROSA, FRANK;ROUX, LAURENT 发明人 TORREGROSA, FRANK;ROUX, LAURENT
分类号 H01J37/32;C23C14/48;H01L21/223 主分类号 H01J37/32
代理机构 代理人
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