发明名称 |
METHOD OF CONTROLLING AN ION IMPLANTER IN PLASMA IMMERSION MODE |
摘要 |
The present invention relates to a method of controlling an ion implanter comprising a plasma power supply (AP) and a substrate power supply (PS), said substrate power supply comprising: . - an electricity generator (HT), . - a first switch (SW1) connected between the generator and the output terminal of said substrate power supply, . - a second switch (SW2) connected between the output terminal and a neutralising terminal, method comprising an implantation phase (A-D) and a neutralisation phase (E-H). This method also comprises a relaxation phase (C-F) which overlaps the implantation phase and the neutralisation phase, relaxation phase during which the plasma power supply is inactivated. Furthermore, the neutralisation phase comprises a preliminary step (E-F) to close the second switch, said preliminary step being followed by a cancellation step (F-G) to activate the plasma power supply (AP). Figure to be published: figure 4. |
申请公布号 |
WO2013057390(A1) |
申请公布日期 |
2013.04.25 |
申请号 |
WO2012FR00392 |
申请日期 |
2012.10.04 |
申请人 |
ION BEAM SERVICES;TORREGROSA, FRANK;ROUX, LAURENT |
发明人 |
TORREGROSA, FRANK;ROUX, LAURENT |
分类号 |
H01J37/32;C23C14/48;H01L21/223 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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