SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device used as a switching element and having a high withstanding voltage and low on-resistance at low cost.

SOLUTION: The semiconductor device comprises: a semiconductor substrate containing a first conductivity type impurity and having a first principal surface and a second principal surface opposed to each other; a first diffusion region containing a second conductivity type impurity at a first concentration and formed so as to be exposed on the first principal surface of the semiconductor substrate; a second diffusion region containing the second conductivity type impurity at a second concentration higher than the first concentration and formed lateral to the first diffusion region so as to be exposed on the first principal surface of the semiconductor substrate; a third diffusion region containing the first conductivity type impurity and formed above the first diffusion region so as to be exposed on the first principal of the semiconductor substrate; and a control electrode opposing the second diffusion region via an insulation film. The first diffusion region and the second diffusion region form a main path of a current controlled depending on a voltage applied to the control electrode.

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