| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist composition providing a high dissolving contrast, a satisfactory nano edge-roughness and a satisfactory pattern rectangularity in organic solvent development, and a pattern forming method for forming a hole pattern by performing positive/negative reversal using a mask disposed with a lattice pattern for forming the hole pattern. <P>SOLUTION: The resist composition contains polymeric compound including a repeating unit which has a hydroxy group protected by an acetal protective group decomposable under the action of an acid, onium salt type photoacid generator which generates sulfonic acid and onium salt type photoacid generator which generates carboxylic acid. A resist film includes a polymeric compound including repeating unit, in which a hydroxy group protected by an acetal protective group decomposable under the action of an acid, is protected by an acetal, a compound which generates sulfonic acid receiving high-energy rays and a compound which generates carboxylic acid. The resist film has a characteristic of a high dissolving contrast in which an unexposed part dissolves quickly and an exposed part dissolves slowly in forming positive/negative reverse image developed with an organic solvent, and a characteristic that the nano edge roughness is reduced. With this, a minute hole pattern can be formed under a satisfactory dimensional control with a high sensitivity. <P>COPYRIGHT: (C)2013,JPO&INPIT |
