发明名称 |
STRUCTURE AND METHOD FOR A HIGH-K TRANSFORMER WITH CAPACITIVE COUPLING |
摘要 |
The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor substrate having an integrated circuit (IC) device; an interconnect structure disposed on the semiconductor substrate and coupled with the IC device; and a transformer disposed on the semiconductor substrate and integrated in the interconnect structure. The transformer includes a first conductive feature; a second conductive feature inductively coupled with the first conductive feature; a third conductive feature electrically connected to the first conductive feature; and a fourth conductive feature electrically connected to the second conductive feature. The third and fourth conductive features are designed and configured to be capacitively coupled to increase a coupling coefficient of the transformer.
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申请公布号 |
US2013099352(A1) |
申请公布日期 |
2013.04.25 |
申请号 |
US201113280786 |
申请日期 |
2011.10.25 |
申请人 |
YEN HSIAO-TSUNG;LIN YU-LING;KUO CHIN-WEI;CHEN HO-HSIANG;JENG MIN-CHIE;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YEN HSIAO-TSUNG;LIN YU-LING;KUO CHIN-WEI;CHEN HO-HSIANG;JENG MIN-CHIE |
分类号 |
H01L23/48;H01L21/768 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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