发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
A highly reliable semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device is manufactured with a high yield to achieve high productivity. In the manufacture of a semiconductor device including a transistor in which a gate electrode layer, a gate insulating film, and an oxide semiconductor film are sequentially stacked and a source electrode layer and a drain electrode layer are provided in contact with the oxide semiconductor film, the source electrode layer and the drain electrode layer are formed through an etching step and then a step for removing impurities which are generated by the etching step and exist on a surface of the oxide semiconductor film and in the vicinity thereof is performed.
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申请公布号 |
US2013099233(A1) |
申请公布日期 |
2013.04.25 |
申请号 |
US201213652708 |
申请日期 |
2012.10.16 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO.;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
TOCHIBAYASHI KATSUAKI;HIGANO SATOSHI;YAMAZAKI SHUNPEI |
分类号 |
H01L29/786;H01L21/44 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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