| 摘要 |
PURPOSE: An etching liquid composition and an etching method are provided to reduce the etching speed difference between copper, copper alloy film, or copper and copper alloy film and a transparent conductive film by adding phosphoric acid. CONSTITUTION: An etching liquid composition and an etching method are utilized for etching copper, copper alloy film, or copper and copper alloy film and a transparent conductive film all together. The etching liquid composition contains hydrochloric acid, ferric chloride or cupric chloride, and water. The concentration of the hydrochloric acid is between 15.0 and 36.0 weight%. The concentration of the ferric chloride or cupric chloride is between 0.05 and 2.00 weight%. The composition contains phosphoric acid.
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