| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device with increased avalanche resistance and reduced on-resistance. <P>SOLUTION: A semiconductor device includes: a MOS that has a semiconductor substrate including a first semiconductor layer, a plurality of second semiconductor layers provided in the semiconductor substrate, a plurality of third semiconductor layers provided on one surface side of the semiconductor substrate, a fourth semiconductor layer selectively formed on a surface of the third semiconductor layer, a control electrode provided on a surface side of the fourth semiconductor layer, and a sixth semiconductor layer provided on the other surface of the first semiconductor layer; a first diode that includes a fifth semiconductor layer provided on the one surface side of the semiconductor substrate, the first semiconductor layer, the second semiconductor layers, and the sixth semiconductor layer, and is connected to a clamp electrode that is in connection with the fifth semiconductor layer; and a second diode that includes a seventh semiconductor layer connected to the control electrode and is connected to the clamp electrode so as to be in reverse series with the first diode. <P>COPYRIGHT: (C)2013,JPO&INPIT |
