| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method and device for producing an SiC single crystal that can melt back even during the growth of the SiC single crystal. <P>SOLUTION: This method for producing an SiC single crystal by a solution method includes: growing the SiC single crystal with the seed crystal 14 as a starting point by bringing an Si-C solution 24 heated to have a temperature gradient that the temperature is decreased from the inside to a surface in a crucible 10 by a heating device 22 disposed around the crucible 10 into contact with SiC seed crystal 14 held by a seed crystal holding axis 12. The method for producing SiC single crystal includes changing the temperature gradient of the area from the inside of the Si-C solution 24 to the surface thereof to the temperature gradient with constant temperature or increasing temperature, and subjecting the seed crystal 14 and the single crystal containing the grown SiC single crystal with the seed crystal 14 as a starting point to melt-back. <P>COPYRIGHT: (C)2013,JPO&INPIT |
