| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of inhibiting a snapback phenomenon without increasing a chip area, in which an IGBT and another semiconductor element are integrally arranged. <P>SOLUTION: A semiconductor device includes an IGBT and another semiconductor element having a drift layer. A drift layer of the IGBT and the drift layer of the other semiconductor element are in contact with each other. An emitter layer of the IGBT and one polarity layer of the other semiconductor element to which a voltage for generating a drift field is applied are conductively connected with each other. A collector layer of the IGBT and the other polarity layer of the other semiconductor element are conductively connected with each other. A wiring part is provided by extending a region facing a region away from a boundary between the drift layer of the IGBT and the drift layer of the other semiconductor element via an insulation layer in a drift direction. In the case of an N-channel IGBT, a current is caused to flow in the wiring part from a collector side toward an emitter side. In the case of a P-channel IGBT, a current is caused to flow in the wiring part from the emitter side toward the collector side. <P>COPYRIGHT: (C)2013,JPO&INPIT |
