MOSFETs with Multiple Dislocation Planes

摘要

A method includes forming a metal-oxide-semiconductor field-effect transistor (MOSFET), which includes forming a first dislocation plane adjacent to a gate electrode of the MOSFET, and forming a second dislocation plane adjacent to the gate electrode of the MOSFET. The first and the second dislocation planes are on a same side of the gate electrode, and extend into source/drain regions of the MOSFET.