| 摘要 |
<p>An LED wafer comprises semiconductor layers and LED electrodes on a bottom surface of the LED wafer. The LED wafer is bonded to a carrier wafer. In a first embodiment, the carrier wafer is fully processed prior to the bonding. In a second embodiment, the carrier wafer is processed after the bonding. In the second embodiment, the LED wafer is bonded to the carrier wafer using a polymer bonding layer. Holes are then etched through the carrier wafer to expose the LED electrodes and then filled with a metal for electrically contacting the LED electrodes and forming bottom electrodes on the carrier wafer. The LED wafer is further processed, such as by removing the epitaxial growth substrate, roughening the surface for increased light extraction, depositing a phosphor, encapsulating, and forming lenses. The bonded wafers are then singulated to form surface mounted LED dies.</p> |
