发明名称 COMPOUND, POLYMER AND PHOTORESIST COMPOSITION
摘要 <P>PROBLEM TO BE SOLVED: To provide a compound used to form a resist film excellent in nanoedge roughness, resolution ratio, pattern collapse resistance and MEEF (Mask Error Enhancement Factor) in addition to fundamental performance such as sensitivity, a polymer obtained by using the compound and a photoresist composition including the polymer. <P>SOLUTION: The compound is shown by formula (1), (wherein R<SP POS="POST">1</SP>represents a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group. R<SP POS="POST">2</SP>represents a single bond or a bivalent bond group. M<SP POS="POST">+</SP>represents a univalent cation), and the univalent cation M<SP POS="POST">+</SP>in formula (1) is preferably a sulfonium such as 4-cyclohexylthiophenyl diphenylsulfonium. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013075843(A) 申请公布日期 2013.04.25
申请号 JP20110215742 申请日期 2011.09.29
申请人 JSR CORP 发明人 MARUYAMA KEN
分类号 C07C309/12;C07C381/12;C08F20/38;G03F7/004;G03F7/039;H01L21/027 主分类号 C07C309/12
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