COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a highly-reliable and high-voltage compound semiconductor device which prevents an electrode material from reaching a boundary between an electrode an a compound semiconductor layer and prevents deterioration in gate characteristics.

SOLUTION: A compound semiconductor device comprises: a compound semiconductor laminate structure 2; a passivation film 6 formed on the compound semiconductor laminate structure 2 and having a pass-through opening 6a; and a gate electrode 7 formed on the passivation film 6 so as to fill the pass-through opening 6a. In the gate electrode 7, crystal grain boundaries 101 between crystal arrays different from each other are formed. A starting point of each crystal grain boundary 101 is positioned on a flat surface of the passivation film 6 away from the pass-through opening 6a.

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