发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To enable inhibition of an occurrence of chipping when forming an ohmic electrode by laser annealing. <P>SOLUTION: In a semiconductor device manufacturing method, laser annealing when forming a drain electrode 11 on a rear face 1b side of an n<SP POS="POST">+</SP>type substrate 1 is performed only in a chip and not performed in a dicing region. As a result, because a region where a laser scar is not left is to be diced when performing dicing with a dicing blade 60, dicing can be performed without being affected by the laser scar, thereby to enable inhibition of an occurrence of chipping. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013077593(A) 申请公布日期 2013.04.25
申请号 JP20110214899 申请日期 2011.09.29
申请人 DENSO CORP 发明人 KAWAI JUN;KONDO TETSUJI;SUGIURA KAZUHIKO;KATO NOBUYUKI
分类号 H01L21/28;H01L21/301;H01L21/336;H01L29/12;H01L29/78 主分类号 H01L21/28
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