发明名称 |
DOPING METHOD IN 3D SEMICONDUCTOR DEVICE |
摘要 |
The present disclosure provides a method to dope fins of a semiconductor device. The method includes forming a first doping film on a first fin and forming a second doping film on the second fin. The first and second doping films include a different dopant type (e.g., n-type and p-type). An anneal process is performed which drives a first dopant from the first doping film into the first fin and drives a second dopant from the second doping film into the second fin. In an embodiment, the first and second dopants are driven into the sidewall of the respective fin.
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申请公布号 |
US2013102137(A1) |
申请公布日期 |
2013.04.25 |
申请号 |
US201113280838 |
申请日期 |
2011.10.25 |
申请人 |
JENG PEI-REN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.,("TSMC") |
发明人 |
JENG PEI-REN |
分类号 |
H01L21/225 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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