| 摘要 |
Provided is a tantalum sputtering target, in which 30 mass ppm or more and 100 mass ppm or less of oxygen is contained as an essential component, and of which purity excluding oxygen and gas components is 99.998% or higher. Additionally provided is a tantalum sputtering target, wherein an average crystal grain size is 120 mum or less and variation in the crystal grain size is ±20% m or less. Thereby obtained is a high-purity tantalum sputtering target having a uniform and fine structure and enabling plasma stabilization and achievement of superior film evenness (uniformity).
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