Method of producing a semiconductor device comprising a through-substrate via and a capping layer and corresponding semiconductor device

摘要

The method of producing a semiconductor device comprises the steps of providing a semiconductor substrate (1) with an electrically conductive structure (11), forming a hole (4) through the substrate in a direction normal to its main surface (10), and forming a through-substrate via (5) in the hole by introducing an electrically conductive material without filling the hole. A capping layer (6) is applied above the main surface in such a way that the capping layer closes the remaining inner volume (14) of the through-substrate via without filling the hole or at least partially covers an annular cavity surrounding the through-substrate via. The capping layer is structured, so that the electrically conductive structure is not completely covered by the capping layer.