| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist composition excellent in photosensitivity, etching resistance in a thin film, and, in particular, etching resistance in an etching condition using an etching liquid of a strong acid such as an aqua regia and a mixture liquid of hydrochloric acid and ferric chloride. <P>SOLUTION: This resin composition contains an unsaturated group containing policarboxylic acid resin A prepared by reacting a saturated or unsaturated polybasic acid anhydride c, and a compound d having an ethylenic unsaturated group and an isocyanate group, with a reaction product I of an epoxy compound a having two or more of epoxy groups in one molecule, and a compound b having one ore more of hydroxy groups and one or more of carboxylic groups in one molecule. The resist composition is prepared by using the resin composition. A resist pattern forming method is also disclosed. <P>COPYRIGHT: (C)2010,JPO&INPIT |
