METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

摘要

A nitride-based semiconductor crystal (10) and a second substrate (30) are bonded together. In this state, impact is applied externally to separate the low-dislocation density region (12) of the nitride-based semiconductor crystal (10) along the hydrogen ion-implanted layer (13), thereby transferring (peeling off) the surface layer part (12b) of the low-dislocation density region (12) onto the second substrate (30). At this time, the lower layer part (12a) of the low-dislocation density region (12) stays on the first substrate (20) without being transferred onto the second substrate (30). The second substrate (30) onto which the surface layer part (12b) of the low-dislocation density region (12) has been transferred is defined as a semiconductor substrate available by the manufacturing method of the present invention, and the first substrate (20) on which the lower layer part (12a) of the low-dislocation density region (12) stays is reused as a substrate for epitaxial growth.