摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent a mismatch by including a thin film resistance pattern with a regular profile. CONSTITUTION: A first insulation layer(200) is arranged on a semiconductor substrate. Metal patterns(300) are arranged on the first insulation layer. A thin film resistance pattern(700) is arranged on the metal patterns. An antireflection layer(500) is arranged between the thin film resistance pattern and the metal patterns. The thin film resistance pattern vertically overlaps with the antireflection layer.
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