SILICON WAFER, SEMICONDUCTOR DEVICE, SILICON WAFER PRODUCTION METHOD AND SEMICONDUCTOR DEVICE PRODUCTION METHOD

摘要

A silicon wafer (1) obtained by etching by not less than 5 µm and not more than 25 µm per surface on either side a surface of crystalline silicon (11) obtained by cutting a silicon crystal ingot (50), the silicon wafer (1) having a surface with a facet (62) having a width of not less than 10 µm and not more than 150 µm, and a semiconductor device having an electrode (12, 13) at that surface, are provided. Furthermore, a method for producing the silicon wafer (1) and a method for producing the semiconductor device that include the step of etching a surface of the crystalline silicon (11) with an aqueous solution of sodium hydroxide having a sodium hydroxide concentration of not less than 20% by mass and not more than 35% by mass by not less than 5 µm and not more than 25 µm per surface on either side, are also provided.