METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND APPARATUS FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

A method of manufacturing an SiC semiconductor device includes the steps of forming a first oxide film on a first surface of an SiC semiconductor (S4), removing the first oxide film (S5), and forming a second oxide film constituting the SiC semiconductor device on a second surface exposed as a result of removal of the first oxide film in the SiC semiconductor (S6). Between the step of removing the first oxide film (S5) and the step of forming a second oxide film (S6), the SiC semiconductor is arranged in an atmosphere cut off from an ambient atmosphere.