METHOD FOR FABRICATING GAN FILM AND SUBSTRATE FOR FABRICATING GAN FILM
摘要
PURPOSE: A method for manufacturing gallium nitride and a gallium nitride film board are provided to prevent cracks on a nitride film due to changed material property. CONSTITUTION: A method for manufacturing gallium nitride comprises the following steps. From the inside of a board, a gallium nitride(GaN) atom and an atom of the board are mixed to form a mixture layer(S110). Gallium nitride is grown on the board(S120). [Reference numerals] (S110) Forming a mixed layer in a substrate; (S120) Growing gallium nitride on the substrate;
申请公布号
KR20130040497(A)
申请公布日期
2013.04.24
申请号
KR20110105311
申请日期
2011.10.14
申请人
SAMSUNG CORNING PRECISION MATERIALS CO., LTD.
发明人
BAE, JUN YOUNG;PARK, HYUN JONG;CHOI, JUN SUNG;KIM, JOON HOI;PARK, BO IK;PARK, CHEOL MIN;SHIN, SEONG HWAN;LEE, WON JO;LEE, SUNG KEUN