| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a recording method for a nonvolatile magnetic thin film memory device which stably operates even when temperature of the device increases. Ž<P>SOLUTION: The nonvolatile magnetic thin film memory device has: a substrate; and a memory cell array composed of memory cells each having a magnetoresistance effect element, the memory cells being two-dimensionally arranged on the substrate. Before recording information on the nonvolatile magnetic thin film memory device, test information is written on the memory cell, and after checking the test information recorded, regular data is recorded. Ž<P>COPYRIGHT: (C)2011,JPO&INPIT Ž |
