发明名称 |
Non-volatile memory comprising bit line air gaps and word line air gaps and corresponding manufacturing method |
摘要 |
Air gap isolation in non-volatile memory arrays and related fabrication processes are provided. Electrical isolation between adjacent active areas of a substrate can be provided, at least in part, by bit line air gaps that are elongated in a column direction between the active areas. At least one cap is formed over each isolation region, at least partially overlying air to provide an upper endpoint for the corresponding air gap. The caps may be formed at least partially along the sidewalls of adjacent charge storage regions. In various embodiments, selective growth processes are used to form capping strips over the isolation regions to define the air gaps. Word line air gaps that are elongated in a row direction between adjacent rows of storage elements are also provided. |
申请公布号 |
EP2583302(A1) |
申请公布日期 |
2013.04.24 |
申请号 |
EP20110741331 |
申请日期 |
2011.06.17 |
申请人 |
SANDISK TECHNOLOGIES INC. |
发明人 |
PURAYATH, VINOD, ROBERT;MATAMIS, GEORGE;HARARI, ELI;KINOSHITA, HIROYUKI;PHAM, TUAN |
分类号 |
H01L21/8247;H01L21/764;H01L27/115 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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