A manufacturing method of a photoelectric conversion apparatus with dual-damascene interconnections

摘要

A photoelectric conversion apparatus includes: a first interlayer insulation film (17) disposed on a semiconductor substrate (1); a first plug (9) disposed in a first hole in the first interlayer insulation film (17), and serving to electrically connect between a plurality of active regions (2,5,8) disposed in the semiconductor substrate (1), between gate electrodes (4,7) of a plurality of MOS transistors, or between the active region (5) and the gate electrode (7) of the MOS transistor, not through the wiring (15,23) of the wiring layer; and a second plug (11) disposed in a second hole in the first interlayer insulation film (17), the second plug (11) being electrically connected to the active region (8), wherein a wiring (15) arranged over the second plug (11) and closest to the second plug (11) is electrically connected to the second plug (11), and the wiring (15) electrically connected to the second plug (11) forms a portion of dual damascene structure. By such a structure, incidence efficiency of light onto a photoelectric conversion element can be improved.