发明名称 |
Nonvolatile random access memory and nonvolatile memory system |
摘要 |
A nonvolatile random access memory includes: a nonvolatile storage area that is randomly accessible and includes a data area to store data and an error-correcting-code area to store an error correcting code, the data area including at least one data area to which a data area unit size is assigned, the error-correcting-code area including at least one error-correcting-code area to which an error-correcting-code-area unit size is assigned; and a nonvolatile storage area controller to set a data size used when the at least one data area is accessed, as the data area unit size. The nonvolatile storage area controller manages the data area and the error-correcting-code area based on the set data area unit size and assigns the at least one error-correcting-code area with the error-correcting-code-area unit size to the at least one data area with the data area unit size based on the data area unit size. |
申请公布号 |
US8429494(B2) |
申请公布日期 |
2013.04.23 |
申请号 |
US20100816685 |
申请日期 |
2010.06.16 |
申请人 |
NAKANISHI KENICHI;TSUTSUI KEIICHI;KOSHIYAMA JUNICHI;SONY CORPORATION |
发明人 |
NAKANISHI KENICHI;TSUTSUI KEIICHI;KOSHIYAMA JUNICHI |
分类号 |
G11C29/00;G06F11/10;H03M13/05 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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