发明名称 Nonvolatile random access memory and nonvolatile memory system
摘要 A nonvolatile random access memory includes: a nonvolatile storage area that is randomly accessible and includes a data area to store data and an error-correcting-code area to store an error correcting code, the data area including at least one data area to which a data area unit size is assigned, the error-correcting-code area including at least one error-correcting-code area to which an error-correcting-code-area unit size is assigned; and a nonvolatile storage area controller to set a data size used when the at least one data area is accessed, as the data area unit size. The nonvolatile storage area controller manages the data area and the error-correcting-code area based on the set data area unit size and assigns the at least one error-correcting-code area with the error-correcting-code-area unit size to the at least one data area with the data area unit size based on the data area unit size.
申请公布号 US8429494(B2) 申请公布日期 2013.04.23
申请号 US20100816685 申请日期 2010.06.16
申请人 NAKANISHI KENICHI;TSUTSUI KEIICHI;KOSHIYAMA JUNICHI;SONY CORPORATION 发明人 NAKANISHI KENICHI;TSUTSUI KEIICHI;KOSHIYAMA JUNICHI
分类号 G11C29/00;G06F11/10;H03M13/05 主分类号 G11C29/00
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