发明名称 |
Nonvolatile memory device and manufacturing method thereof |
摘要 |
There are provided a resistance variable nonvolatile memory device which changes its resistance stably at low voltages and is suitable for a miniaturized configuration, and a manufacturing method thereof. The nonvolatile memory device comprises: a substrate (100); a first electrode (101); an interlayer insulating layer (102); a memory cell hole (103) formed in the interlayer insulating layer; a first resistance variable layer (104a) formed in at least a bottom portion of the memory cell hole and connected to the first electrode; a second resistance variable layer (104b) formed inside the memory cell hole (103) and located on the first resistance variable layer (104a); and a second electrode (105); the first resistance variable layer (104a) and the second resistance variable layer (104b) respectively comprising metal oxides of the same kind; and the first resistance variable layer (104a) having a higher oxygen content than the second resistance variable layer (104b).
|
申请公布号 |
US8426836(B2) |
申请公布日期 |
2013.04.23 |
申请号 |
US200913132544 |
申请日期 |
2009.06.30 |
申请人 |
MIKAWA TAKUMI;KAWASHIMA YOSHIO;HIMENO ATSUSHI;PANASONIC CORPORATION |
发明人 |
MIKAWA TAKUMI;KAWASHIMA YOSHIO;HIMENO ATSUSHI |
分类号 |
H01L29/02 |
主分类号 |
H01L29/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|