发明名称 |
Thin-film semiconductor device, lateral bipolar thin-film transistor, hybrid thin-film transistor, MOS thin-film transistor, and method of fabricating thin-film transistor |
摘要 |
In a lateral bipolar transistor including an emitter, a base and a collector which are formed in a semiconductor thin film formed on an insulating substrate, the semiconductor thin film is a semiconductor thin film which is crystallized in a predetermined direction. In addition, in a MOS-bipolar hybrid transistor formed in a semiconductor thin film formed on an insulating substrate, the semiconductor thin film is a semiconductor thin film which is crystallized in a predetermined direction. |
申请公布号 |
US8426264(B2) |
申请公布日期 |
2013.04.23 |
申请号 |
US201113149175 |
申请日期 |
2011.05.31 |
申请人 |
KAWACHI GENSHIRO;SHARP KABUSHIKI KAISHA |
发明人 |
KAWACHI GENSHIRO |
分类号 |
H01L21/8238;H01L21/00 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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