发明名称 Thin-film semiconductor device, lateral bipolar thin-film transistor, hybrid thin-film transistor, MOS thin-film transistor, and method of fabricating thin-film transistor
摘要 In a lateral bipolar transistor including an emitter, a base and a collector which are formed in a semiconductor thin film formed on an insulating substrate, the semiconductor thin film is a semiconductor thin film which is crystallized in a predetermined direction. In addition, in a MOS-bipolar hybrid transistor formed in a semiconductor thin film formed on an insulating substrate, the semiconductor thin film is a semiconductor thin film which is crystallized in a predetermined direction.
申请公布号 US8426264(B2) 申请公布日期 2013.04.23
申请号 US201113149175 申请日期 2011.05.31
申请人 KAWACHI GENSHIRO;SHARP KABUSHIKI KAISHA 发明人 KAWACHI GENSHIRO
分类号 H01L21/8238;H01L21/00 主分类号 H01L21/8238
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