发明名称 Evaporation donor substrate and method for manufacturing light-emitting device
摘要 A first supporting substrate on a front surface of which a reflective layer having an opening is formed and a second supporting substrate on a front surface of which a light absorption layer patterned into island or stripe shapes and a material layer over the light absorption layer are formed are prepared, the first and second supporting substrates are disposed so that the opening of the reflective layer and the light absorption layer overlap with each other and the reflective layer is in contact with a back surface of the second supporting substrate, the second supporting substrate and a deposition target substrate are disposed so that the front surface of the second supporting substrate faces the deposition target substrate, and the material layer is attached to the deposition target substrate by irradiating the back surface of the first supporting substrate with light and by sublimating the material layer.
申请公布号 US8425974(B2) 申请公布日期 2013.04.23
申请号 US20080272034 申请日期 2008.11.17
申请人 TAKAHASHI RENA;SATO YOSUKE;YOKOYAMA KOHEI;AOYAMA TOMOYA;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 TAKAHASHI RENA;SATO YOSUKE;YOKOYAMA KOHEI;AOYAMA TOMOYA
分类号 B05D5/12;B41M5/40 主分类号 B05D5/12
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